Magnetic-Devices

TM Hall Effect Measurement System

INQUIRY

The TM Hall Effect Measurement System can be Used to measure important parameters such as carrier concentration, mobility, resistivity, Hall coefficient and other important parameters. These parameters are necessary to understand the electrical properties of semiconductor materials, so the Hall effect test system is a necessary tool for understanding and studying the electrical properties of semiconductor devices and semiconductor materials.

Profield

The instrument system consists of an electromagnet, electromagnet power supply, high precision constant current source, high precision voltmeter, Hall effect sample holder, standard sample and system software.

Parameters

Physical parameters	Carrier concentration	10³cm⁻³ - 10²³cm⁻³
	Mobility	0 .1 cm²/ voltsec - 10⁸cm²/ voltsec
	Resistivity range	10⁻⁷ Ohmcm - 10¹² Ohmcm
	Hall voltage	1 uV - 3V
	Hall coefficient	10⁻⁵ - 10²⁷cm³/ C
Testable material type	Semiconductor material	SiGe, SiC, InAs, InGaAs, InP,AlGaAs, HgCdTe and ferrite materials etc.
	low resistance material	Graphene, metals, transparent oxides, weakly magnetic semiconductor materials, TMR materials, etc.
	high resistance material	Semi-insulating GaAs, GaN, CdTe, etc.
	Material Conductive Particles	Type P and Type N testing of materials
Magnetic field environment	Magnet Type	Variable electromagnet
	Magnitude of magnetic field	1900mT (The pole pitch is 10mm) 1300mT (The pole pitch is 20mm) 900mT (The pole pitch is 30mm) 800mT (The pole pitch is 40mm) 600mT (The pole pitch is 50mm)
	Uniform area: 1%	Minimum resolution: 0.1Gs
	Optional magnetic environment	The electromagnet of relevant magnetic size can be customized according to the needs of customers
Electrical parameters	Current source	50.00nA- 50.00mA
	Current source resolution	0.0001uA
	Measuring voltage	0 ~ ±3V
	Voltage measurement resolution	0.0001 mV
Other Accessories	Shading	Extern ally installed light-shielding parts make the test material more stable
	Sample size	normal 10mm * 10mm Maximum 16mm * 16mm
	Box cabinet	6006001000mm
	Test piece	Hall effect of Institute of Semiconductors, Chinese Academy of Sciences Standard test samples and data: 1 set (Si, Ge, GaAs, lnSb)
	Making ohmic contacts	Electric soldering iron, indium chip, solder, enameled wire, etc.
One-button automatic measurement can be performed without the need for human operation after the test is started
The software can perform I-V curve and BV curve
Set in software for automatic temperature measurement
The experimental results are measured, and the data will be temporarily saved in the software. If long-term storage is required, the data can be exported to an EXCEL table to facilitate later data processing.
Provide the Hall effect standard test samples and data of the Institute of Semiconductors, Chinese Academy of Sciences: 1 set

High And Low Temperature Accessories

System model	Test temperature zone	System Test Index
HLS High and Low Temperature Hall Effect Test System	80K~500K (high and low temperature, temperature adjustment 0.1K)	Minimum resolution: 0.1GS Sample current: 0.05uA～50mA (adjust 0.1nA) Magnetic field: 2T at 10mm spacing; 1T at 30mm spacing Resistivity range: 10-5～107 Ohmcm Carrier concentration: 103～1023cm-3 Mobility: 0.1～108cm2/voltsec Resistance range: 10m Ohms～6MOhms
H-A High-Temperature Hall Effect Test System	300K~500K (high temperature, temperature adjustment 0.1K)
L-A Low-Temperature Hall Effect Test System	80K~300K (low temperature, temperature adjustment 0.1K)
L-SA Low-Temperature Hall Effect Test System	4K~300K (low temperature, temperature adjustment 0.1K)
HL-SA High and Low Temperature Hall Effect Test System	80K~800K (high and low temperature, temperature adjustment 0.1K)
H-B High-Temperature Hall Effect Test System	300 K~800K (high temperature, temperature adjustment 0.1K)